Title :
D-band InP Gunn devices with second-harmonic power extraction up to 290 GHz
Author :
Eisele, H. ; Haddad, G.I.
Author_Institution :
Solid State Electron. Lab., Michigan Univ., Ann Arbor, MI
fDate :
11/10/1994 12:00:00 AM
Abstract :
An InP Gunn device designed for fundamental-mode operation in D-band was mounted on a diamond heatsink for improved heat dissipation. The highest RF output power measured was 56 mW at 128 GHz and 49 mW at 132 GHz with DC-to-RF conversion efficiencies above 2%. Typical phase noise is well below -100 dBc/ Hz at 500 kHz off the carrier. Devices tested in second-harmonic mode yielded more than 0.3 mW between 280 and 290 GHz
Keywords :
Gunn oscillators; III-V semiconductors; indium compounds; millimetre wave oscillators; phase noise; semiconductor device noise; semiconductor device testing; 128 GHz; 132 GHz; 290 GHz; 49 mW; 56 mW; D-band InP Gunn devices; DC-to-RF conversion efficiencies; InP; diamond heatsink; fundamental-mode operation; highest RF output power; improved heat dissipation; phase noise; second-harmonic mode; second-harmonic power extraction; semiconductor device testing;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941354
