• DocumentCode
    1205096
  • Title

    Separation of irradiation induced gate oxide charge and interface traps effects in power VDMOSFETs

  • Author

    Stojadinovic, Ninoslav ; Golubovic, S. ; Davidovic, V.

  • Author_Institution
    Fac. of Electron. Eng., Nis Univ.
  • Volume
    30
  • Issue
    23
  • fYear
    1994
  • fDate
    11/10/1994 12:00:00 AM
  • Firstpage
    1992
  • Lastpage
    1993
  • Abstract
    Irradiation induced degradation mechanisms in power VDMOSFETs are analysed using the subthreshold-midgap and single-transistor mobility methods. It is shown that the irradiation induced degradation of power VDMOSFETs is due to a significant increase of the gate oxide charge and somewhat smaller increase of the interface traps
  • Keywords
    electron traps; power MOSFET; radiation effects; radiation hardening; semiconductor device noise; gate oxide charge; interface traps; irradiation induced degradation; irradiation induced degradation mechanisms; irradiation induced gate oxide charge; power VDMOSFETs; single-transistor mobility; subthreshold-midgap;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19941309
  • Filename
    335700
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1205096