Vapor sensor realized in an ultracompact polarization interferometer built of a freestanding porous-silicon form birefringent film

Author

Beom-Hoan, O. ; Liu, Rong ; Li, Yang Yang ; Sailor, Michael J. ; Fainman, Yeshaiahu

Author_Institution

Sch. of Electr. & Comput. Eng., INHA Univ., Inchon, South Korea

Volume

15

Issue

6

fYear

2003

fDate

6/1/2003 12:00:00 AM

Firstpage

834

Lastpage

836

Abstract

A novel vapor sensor that uses polarization interferometry in a form birefringent porous-silicon film is introduced, analyzed, and experimentally characterized. Simulations and analysis of accuracy, versatility, stability, and control of dynamic range of the device are provided. The simulation accurately predicts the polarization interference signal, which is used to estimate the effective refractive indexes characterizing the form birefringence of a porous-silicon film with 0.001 accuracy. The device was tested for the detection of heptane concentration in a range of 342-20 000 ppm (=2.0%).

Keywords

birefringence; elemental semiconductors; gas sensors; light interferometers; optical films; optical sensors; organic compounds; porous semiconductors; refractive index; silicon; Si; accuracy; dynamic range control; effective refractive indexes; freestanding porous-silicon form birefringent film; heptane concentration detection; polarization interference signal; polarization interferometry; simulations; stability; ultracompact polarization interferometer; vapor sensor; versatility; Analytical models; Birefringence; Dynamic range; Interference; Interferometry; Optical films; Polarization; Predictive models; Sensor phenomena and characterization; Stability analysis;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2003.811344

Filename

1200215