DocumentCode
1205499
Title
High optical responsivity of InAlAs-InGaAs metamorphic high-electron mobility transistor on GaAs substrate with composite channels
Author
Choi, C.-S. ; Kang, H.-S. ; Woo-Young Choi ; Kim, Hyun-Jung ; Choi, W.-J. ; Kim, Do-Hyeon ; Jang, K.-C. ; Seo, K.-S.
Author_Institution
Dept. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea
Volume
15
Issue
6
fYear
2003
fDate
6/1/2003 12:00:00 AM
Firstpage
846
Lastpage
848
Abstract
The high optical responsivity of the InAlAs-InGaAs metamorphic high-electron mobility transistor on GaAs substrate with composite channels is reported. Experimental results verify that the photovoltaic effect causing the effective decrease of threshold voltage is responsible for the photoresponse to a 1.55-μm optical illumination.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; infrared detectors; phototransistors; photovoltaic effects; 1.55 micron; GaAs; GaAs substrate; InAlAs-InGaAs; InAlAs-InGaAs metamorphic high-electron mobility transistor; composite channels; high optical responsivity; optical illumination; photoresponse; photovoltaic effect; threshold voltage; Gallium arsenide; HEMTs; Lighting; MODFETs; Optical noise; Optical receivers; Optical sensors; Substrates; Threshold voltage; mHEMTs;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2003.811339
Filename
1200219
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