Title :
Application of the Quantized Hall Effect to a New Resistance Standard at VSL
Author :
Van Der Wel, W. ; Harmans, Kees J.P.M. ; Kaarls, Robert ; Mooij, J.E.
fDate :
6/1/1985 12:00:00 AM
Abstract :
A description is given of the setup for quantized Hall effect measurements. Preliminary results, obtained with MOCVD grown GaAs-AIGaAs heterojunctions, are presented. These include temperature dependence of the quantized Hall resistance. Overall accuracy is estimated to be better than 0.2 ppm.
Keywords :
Circuits; Density estimation robust algorithm; Electrical resistance measurement; Hall effect; Heterojunctions; Laboratories; MOCVD; Magnetic field measurement; Noise level; Temperature dependence;
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
DOI :
10.1109/TIM.1985.4315333
