Title :
An analytical and experimental investigation of the cutoff frequency fT of high-speed bipolar transistors
Author :
Nanba, Mitsuo ; Shiba, Takeo ; Nakamura, Tohru ; Toyabe, Toru
Author_Institution :
Hitachi, Ltd., Tokyo, Japan
fDate :
7/1/1988 12:00:00 AM
Abstract :
The effects of vertical and lateral structures on cutoff frequency and breakdown voltage are investigated for high-speed bipolar transistors. The cutoff frequencies are examined in the range from 2.5 to 80 GHz by analysis and from 3 to 20 GHz by experiment. To attain the maximum cutoff frequency, it is predicted that the collector width, the base width, and the collector concentration should be 0.12 μm, 0.07 μm, and 1.2×1016 cm-3, respectively, and that in this scaled transistor, breakdown voltages, BVCE0 and BVC8O should be reduced below 3 and 7.7 V respectively
Keywords :
bipolar integrated circuits; bipolar transistors; electric breakdown of solids; semiconductor device models; solid-state microwave devices; 0.07 micron; 0.12 micron; 2.5 to 80 GHz; 3 V; 7.7 V; EHF; SHF; base width; breakdown voltage; collector concentration; collector width; cutoff frequency; high-speed bipolar transistors; lateral structures; microwave operation; model; monolithic IC; scaled transistor; vertical structures; Bipolar transistors; Capacitance; Circuit synthesis; Cutoff frequency; Geometry; Integrated circuit technology; Lithography; Pareto analysis; Silicon; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
