InP/GaInAsP guided-wave phase modulators based on carrier-induced effects: theory and experiment

Author

Vinchant, Jean-François ; Cavaillès, Jean Aristide ; Erman, Marko ; Jarry, Philippe ; Renaud, Monique

Author_Institution

Lab. d´´Electron. Philips, Limeil-Brevannes, France

Volume

10

Issue

1

fYear

1992

fDate

1/1/1992 12:00:00 AM

Firstpage

63

Lastpage

70

Abstract

An overview of the different contributions due to carrier-induced effects that appear in InP/GaInAsP guided-wave phase modulators is given. The authors review and calculate the band-filling effect in such devices and point out optimized structures. The fabrication of phase modulators and directional coupler switches based on a GaInAsP/InP heterostructure is described. These devices exhibit modulation characteristics in good agreement with the calculations having a phase modulation efficiency as high as 11°/V mm and low optical losses

Keywords

III-V semiconductors; directional couplers; gallium arsenide; gallium compounds; indium compounds; integrated optics; optical communication equipment; optical couplers; optical modulation; optical switches; optical waveguides; phase modulation; semiconductor switches; InP-GaInAsP; band-filling effect; carrier-induced effects; coupler switch fabrication; directional coupler switches; guided-wave phase modulators; heterostructure; low optical losses; modulation characteristics; optical workshop techniques; optimized structures; overview; phase modulation efficiency; phase modulator fabrication; semiconductors; High speed optical techniques; Indium phosphide; Optical fiber networks; Optical losses; Optical modulation; Optical polarization; Optical refraction; Optical switches; Optical waveguides; Phase modulation;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.108738

Filename

108738