λ/4-shifted DFB laser/electroabsorption modulator integrated light source for multigigabit transmission

Author

Suzuki, Masatoshi ; Tanaka, Hideaki ; Taga, Hidenori ; Yamamoto, Shu ; Matsushima, Yuichi

Author_Institution

KDD R&D Lab, Saitama, Japan

Volume

10

Issue

1

fYear

1992

fDate

1/1/1992 12:00:00 AM

Firstpage

90

Lastpage

95

Abstract

High-speed, low-chirp, and low voltage driving characteristics of 1.55-μm λ/4-shifted distributed-feedback (DFB) laser/InGaAsP electroabsorption modulator integrated light sources are reported. By optimization of the composition and thickness of the modulator waveguide, the driving voltage for a 10-dB extinction ratio was reduced to 1.4-3 V, depending on the modulator length in the range of 240-125 μm. High-speed modulation up to 10-Gb/s NRZ modulation was achieved by the integrated device with a 125-μm modulator length. The linewidth enhancement factor of the integrated modulator was estimated to be 0.15-0.48

Keywords

III-V semiconductors; distributed feedback lasers; electro-optical devices; electroabsorption; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; light sources; optical communication equipment; optical modulation; semiconductor junction lasers; λ/4-shifted DFB laser; 1.4 to 3 V; 1.55 micron; 10 Gbit/s; 125 to 240 micron; InGaAsP; NRZ modulation; distributed-feedback; electroabsorption modulator; extinction ratio; integrated light source; linewidth enhancement factor; low voltage driving; low-chirp; modulator length; modulator waveguide; multigigabit transmission; optimization; semiconductors; waveguide composition; waveguide thickness; Chirp modulation; Diode lasers; Fiber lasers; Indium phosphide; Light sources; Optical fiber devices; Optical modulation; Optical waveguides; Voltage; Waveguide lasers;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.108742

Filename

108742