Gain and threshold-current calculation of V-groove quantum-wire InGaAs-InP laser

Author

Gvozdic, Dejan M. ; Nenadovic, Nebojsa M. ; Schlachetzki, Andreas

Author_Institution

Inst. fur Halbleitertechnik, Technische Univ. Braunschweig, Germany

Volume

38

Issue

12

fYear

2002

fDate

12/1/2002 12:00:00 AM

Firstpage

1565

Lastpage

1579

Abstract

This paper presents material-gain and threshold-current calculation of a InGaAs-InP quantum-wire laser in the framework of the k_·p method, with included conduction-band nonparabolicity for the first time. The method for band-structure calculation is based on conformal mapping and Fourier expansion. The calculation shows that high material gain (7000 cm^-1) can be achieved at room temperature for polarization along the free axis of the quantum wire. We propose an optimized laser structure, based on a stack of quantum wires.

Keywords

III-V semiconductors; band structure; conduction bands; gallium arsenide; indium compounds; k.p calculations; laser theory; quantum well lasers; semiconductor device models; semiconductor quantum wires; Fourier expansion; InGaAs-InP; V-groove quantum-wire InGaAs-InP laser; band-structure calculation; conformal mapping; high material gain; included conduction-band nonparabolicity; k_·p method; laser gain; material-gain calculation; optimized laser structure; quantum wire; quantum wire stack; room temperature; threshold-current calculation; Laser theory; Optical fiber communication; Optical materials; Optical modulation; Optical sensors; Optical transmitters; Orbital calculations; Quantum well lasers; Threshold current; Wire;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2002.805106

Filename

1088069