Very low noise RF nMOSFETs on plastic by substrate thinning and wafer transfer

Author

Kao, H.L. ; Hung, B.F. ; Chin, A. ; Lai, J.M. ; Lee, C.F. ; McAlister, S.P. ; Chi, C.C.

Author_Institution

Dept. of Electron. Eng., Nano Sci. Technol. Center, Hsinchu, Taiwan

Volume

15

Issue

11

fYear

2005

Firstpage

757

Lastpage

759

Abstract

A very low minimum noise figure (NF_min) of 1.2 dB and a high associated gain of 12.8 dB at 10 GHz were measured for six-finger, 0.18-μm radio frequency (RF) metal-oxide semiconductor field-effect transistors mounted on insulating plastic following substrate-thinning (/spl sim/30 μm) and wafer transfer. Before this process, the devices had a slightly better RF performance of 1.1-dB NF_min and a 13.7-dB associated gain. The small RF performance degradation of the active transistors transferred to plastic shows the potential of integrating electronics onto plastic.

Keywords

MOSFET; plastics; radiofrequency integrated circuits; substrates; 0.18 micron; 1.1 dB; 1.2 dB; 10 GHz; 12.8 dB; 13.7 dB; RF nMOSFET; active transistors; insulating plastic; metal-oxide semiconductor field effect transistors; substrate thinning; wafer transfer; Frequency measurement; Gain measurement; MOS devices; MOSFETs; Noise figure; Noise measurement; Plastics; Radio frequency; Semiconductor device noise; Substrates; Associated gain; metal-oxide semiconductor field-effect transistor (MOSFET); minimum noise figure; plastic; radio frequency (RF);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2005.858999

Filename

1525065