Title :
50-Gb/s SiGe BiCMOS 4:1 multiplexer and 1:4 demultiplexer for serial communication systems
Author :
Meghelli, Mounir ; Rylyakov, Alexander V. ; Shan, Lei
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
12/1/2002 12:00:00 AM
Abstract :
4:1 multiplexer and 1:4 demultiplexer ICs targeting SONET OC-768 applications are reported. The ICs have been implemented using a 120-GHz-fT 0.18-μm SiGe BiCMOS process. Both ICs have been packaged to enable bit error rate testing by connecting their serial interfaces. Error-free operation has been achieved for both circuits at data rates beyond 50 Gb/s. At a -3.6-V supply voltage, the multiplexer and demultiplexer dissipate 410 and 430 mA, respectively. Switching behavior of the 4:1 multiplexer has also been checked up to 70 Gb/s.
Keywords :
BiCMOS digital integrated circuits; Ge-Si alloys; SONET; demultiplexing equipment; integrated circuit packaging; integrated circuit testing; multiplexing equipment; semiconductor materials; -3.6 V; 0.18 micron; 120 GHz; 410 mA; 430 mA; 50 Gbit/s; 70 Gbit/s; IC packaging; SONET OC-768 applications; SiGe; SiGe BiCMOS 1:4 demultiplexer; SiGe BiCMOS 4:1 multiplexer; bit error rate testing; custom-designed package; error-free operation; output eye diagram; serial communication systems; serial interfaces; supply voltage; switching behavior; BiCMOS integrated circuits; Bit error rate; Circuit testing; Error-free operation; Germanium silicon alloys; Joining processes; Multiplexing; Packaging; SONET; Silicon germanium;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2002.804338
