Evaluation of Hot-Electron Effect on LDMOS Device and Circuit Performances

Laterally double-diffused MOS (LDMOS) transistors subjected to hot-electron stress effects have been studied experimentally. The measured threshold voltage, on-resistance, and gate capacitance of LDMOS transistors all increase after stress. The transistor model simulation is compared with the experimental data. Good agreement between the model predictions and measurement results is obtained. The gate charging time of the LDMOS and a full-bridge dc-dc converter are simulated in Cadence SpectreRF. The simulation results indicate that the gate charge of the LDMOS increases and that the power efficiency of the full-bridge dc-dc converter decreases after hot-electron stress.