DocumentCode
1207247
Title
The silicon heterostructure switch: developments and experimental evaluation
Author
Green, Roger J. ; Brown, Jeremy D. ; Simmons, John G.
Author_Institution
Sch. of Electr. & Electron. Eng., Bradford Univ., UK
Volume
35
Issue
7
fYear
1988
fDate
7/1/1988 12:00:00 AM
Firstpage
1035
Lastpage
1044
Abstract
The metal-polysilicon-silicon (MPSS) switch, with which the polysilicon provides a semi-insulating layer, is evaluated. Fabrication details and measurements results are presented. The effects of the temperature on the main parameters are examined and correlated with a theoretical model which can be used to optimize the device for particular switching characteristics
Keywords
elemental semiconductors; metal-insulator-semiconductor devices; semiconductor device models; semiconductor switches; silicon; MIS device; MPSS type; Si heterostructure switch; fabrication; metal/poly-Si/Si structure; semiconductor device; semiinsulating layer; switching characteristics; temperature; theoretical model; Capacitance; Delay; Feedback; Insulation; Predictive models; Silicon; Switches; Switching circuits; Temperature; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.3362
Filename
3362
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