Title :
The silicon heterostructure switch: developments and experimental evaluation
Author :
Green, Roger J. ; Brown, Jeremy D. ; Simmons, John G.
Author_Institution :
Sch. of Electr. & Electron. Eng., Bradford Univ., UK
fDate :
7/1/1988 12:00:00 AM
Abstract :
The metal-polysilicon-silicon (MPSS) switch, with which the polysilicon provides a semi-insulating layer, is evaluated. Fabrication details and measurements results are presented. The effects of the temperature on the main parameters are examined and correlated with a theoretical model which can be used to optimize the device for particular switching characteristics
Keywords :
elemental semiconductors; metal-insulator-semiconductor devices; semiconductor device models; semiconductor switches; silicon; MIS device; MPSS type; Si heterostructure switch; fabrication; metal/poly-Si/Si structure; semiconductor device; semiinsulating layer; switching characteristics; temperature; theoretical model; Capacitance; Delay; Feedback; Insulation; Predictive models; Silicon; Switches; Switching circuits; Temperature; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
