DocumentCode :
1207278
Title :
Fast Neutron Induced Current in Semiconductor Diodes Glass Dosimeter
Author :
Gilmour, G.A.
Author_Institution :
Nuclear Reactor Laboratory Cornell University Ithaca, New York
Volume :
10
Issue :
4
fYear :
1963
Firstpage :
18
Lastpage :
22
Abstract :
A theory for the current induced in semiconductor diodes by fast neutron radiation is presented. Experimental verification of the theory is given for silicon rectifiers. It is shown that the signals induced by fast neutrons from a fission source are approximately 7% and 0.2% as large as the gamma ray induced signals for silicon and germanium devices respectively.
Keywords :
Atomic measurements; Electrons; Fission reactors; Glass; Ionization; Laboratories; Neutrons; Semiconductor devices; Semiconductor diodes; Silicon;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS2.1963.4315458
Filename :
4315458
Link To Document :
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