Deposition and characterization of thin ferroelectric lead lanthanum zirconate titanate (PLZT) films on sapphire for spatial light modulators applications

Author

Krishnakumar, S. ; Ozguz, V.H. ; Fan, C. ; Cozzolino, C. ; Esener, S.C. ; Lee, S.H.

Author_Institution

ECE Dept., California Univ., San Diego, La Jolla, CA, USA

Volume

38

Issue

6

fYear

1991

Firstpage

585

Lastpage

590

Abstract

Ferroelectric lead lanthanum zirconate titanate (PLZT) films are deposited on R-plane sapphire using RF triode magnetron sputtering. Perovskite PLZT films with the desired composition (9/65/35) are obtained using compensated deposition techniques around 500 degrees C and postdeposition annealing at 650 degrees C. The deposited films exhibit good optical and electrooptical properties. The room temperature dielectric constant of the films was 1800 at 10 kHz. The refractive index of the films was in the range of 2.2-2.5. The films showed a quadratic electrooptic effect with R=0.6 *10/sup -16/ m/sup 2//V/sup 2/. The development of PLZT on silicon-on-sapphire smart spatial light modulators using these films is also explored.<>

Keywords

electro-optical effects; ferroelectric materials; ferroelectric thin films; lanthanum compounds; lead compounds; optical modulation; permittivity; refractive index; sputter deposition; sputtered coatings; 10 kHz; 500 degC; 650 degC; Al/sub 2/O/sub 3/; Al/sub 2/O/sub 3/-Si-PLZT; Al2O3-Si-PbLaZrO3TiO3; PbLaZrO3TiO3; RF triode magnetron sputtering; compensated deposition techniques; deposition; electrooptical properties; optical properties; perovskite films; postdeposition annealing; refractive index; room temperature dielectric constant; sapphire; smart spatial light modulators; thin ferroelectric PLZT films; Annealing; Ferroelectric films; Ferroelectric materials; Lanthanum; Optical films; Optical refraction; Optical variables control; Radio frequency; Sputtering; Titanium compounds;

fLanguage

English

Journal_Title

Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on

Publisher

ieee

ISSN

0885-3010

Type

jour

DOI

10.1109/58.108856

Filename

108856