Title :
A physics-based current-dependent base resistance mode; for advanced bipolar transistors
Author :
Yuan, Jiann-shiun ; Liou, Juin J. ; Eisenstadt, William R.
Author_Institution :
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
fDate :
7/1/1988 12:00:00 AM
Abstract :
A physics-based current-dependent base resistance model has been developed that includes physical mechanisms such as base-width modulation, base-conductivity modulation, phase pushout, and emitter current crowding. It describes the current-dependent characteristics of the base resistance for all injection levels. A two-dimensional device simulator, PISCES, is used to justify the underlying physics. The predictions of the model show good agreement with results of measurements and device simulations. The model has been implemented in SPICE
Keywords :
bipolar transistors; electronic engineering computing; equivalent circuits; semiconductor device models; PISCES; SPICE implementation; base-conductivity modulation; base-width modulation; bipolar transistors; current-dependent base resistance mode; emitter current crowding; phase pushout; physical mechanisms; two-dimensional device simulator; Bipolar transistors; Current density; Doping; Electrical resistance measurement; Modems; Phase modulation; Physics; Predictive models; Proximity effect; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
