Title :
Gate current 1/f noise in GaAs MESFET´s
Author :
Vandamme, Lode K J ; Rigaud, Dominique ; Peransin, Jean-Marie ; Alabedra, Robert ; Dumas, Jean-Michel
Author_Institution :
Eindhoven Univ. of Technol., Netherlands
fDate :
7/1/1988 12:00:00 AM
Abstract :
Gate current 1/f has been investigated on commercial GaAs MESFETs. It is found that devices with slight differences in drain current noise can have quite a different type of Ig versus Vds and Vgs and even greater differences in the gate current noise. The 1/f part in the spectrum of the gate current is a better diagnostic tool for characterizing the quality of the junction than the drain current noise. A model that is based on a Schottky barrier shunted by edge currents is proposed to explain the experimental results
Keywords :
III-V semiconductors; Schottky gate field effect transistors; electron device noise; gallium arsenide; random noise; semiconductor device models; 1/f noise; GaAs; III-V semiconductors; MESFETs; Schottky barrier; diagnostic tool; drain current noise; edge currents; gate current noise; junction quality characterisation; model; random noise; Acoustical engineering; Chemicals; Current measurement; Electrodes; Equivalent circuits; Gallium arsenide; Gold; MESFETs; Schottky barriers; Superluminescent diodes;
Journal_Title :
Electron Devices, IEEE Transactions on
