Title :
A new punchthrough current model based on the voltage-doping transformation
Author :
Skotnicki, Tomasz ; Merckel, Gérard ; Pedron, Thierry
Author_Institution :
CNET-CNS, Meylan, France
fDate :
7/1/1988 12:00:00 AM
Abstract :
The punchthrough phenomenon is investigated by a 2-D numerical analysis. A physical interpretation that relates this phenomenon to the drain-field-induced reduction in doping concentration is proposed. This interpretation allows a better understanding of the mechanism of surface and bulk punchthrough flows and provides a guideline for the quantitative solution to the problem. The relation between the reduced N* and real N dopings (called the voltage-doping transformation, or VDT) is derived from the two-dimensional Poisson equation. It is shown that as a result of the VDT, it is possible to accurately calculate the actual barrier heights as a function of applied voltages and channel length using the well-known long-channel expressions where N is substituted by N*
Keywords :
insulated gate field effect transistors; semiconductor device models; semiconductor doping; 2D numerical analysis; MOSFET; applied voltages; barrier height calculation; bulk punchthrough flows; channel length; doping concentration; drain-field-induced reduction; long-channel expressions; punchthrough current model; semiconductor devices; surface punchthrough flow; two-dimensional Poisson equation; voltage-doping transformation; Analytical models; Doping profiles; Electric variables; Leakage current; MOSFET circuits; Numerical simulation; Poisson equations; Semiconductor process modeling; Surface treatment; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
