Title :
Analytical modeling and design criteria for traveling-wave FET amplifiers
Author :
D´Agostino, Stefano ; d´Inzeo, Guglielmo ; Tudini, Luca
Author_Institution :
Dept. of Electron., Rome Univ., Italy
Abstract :
The theoretical modeling and design of a traveling-wave FET are described. The device shows the capability of wide-bandwidth performance and high gain and could be useful in power applications. The proposed analytical model considers the full mode effects of the three-coupled transmission lines and an accurate analysis of the FET model in the traveling-wave amplifier. Starting from electrode dimensions and active zone doping, such a model allows one to calculate the scattering parameters. Thus, it is possible to analyze the device as a six port network in a circuit analysis program.<>
Keywords :
Schottky gate field effect transistors; microwave amplifiers; semiconductor device models; solid-state microwave devices; wideband amplifiers; active zone doping; analytical modeling; circuit analysis program; design criteria; full mode effects; high gain; scattering parameters; six port network; three-coupled transmission lines; traveling-wave FET amplifiers; traveling-wave amplifier; wide-bandwidth performance; Analytical models; Broadband amplifiers; Distributed parameter circuits; Doping; Electrodes; FETs; Performance gain; Power transmission lines; Semiconductor process modeling; Transmission line theory;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
