• DocumentCode
    1207850
  • Title

    Experimental determination of time constants for ion-induced transients in static memories

  • Author

    Weaver, Harry T. ; Browning, John S. ; Shafer, Blynn D. ; Fu, J.S.

  • Author_Institution
    Sandia Nat. Lab., Albuquerque, NM, USA
  • Volume
    35
  • Issue
    7
  • fYear
    1988
  • fDate
    7/1/1988 12:00:00 AM
  • Firstpage
    1116
  • Lastpage
    1119
  • Abstract
    Time constants for voltage transients following high energy ion strikes on static memories are determined from a series of experiments measuring cross sections for single-event upset. For a given strike location within the circuit, the transient time constant saturates with increasing deposited energy. These maximum transients, for strikes at the two known sensitive areas, `off´ p-channel drain and `off´ n-channel drain, were measured at 6 and 0.8 ns, respectively
  • Keywords
    integrated memory circuits; ion beam effects; random-access storage; transient response; high energy ion strikes; ion-induced transients; single-event upset; static memories; time constants; voltage transients; Area measurement; Circuits; Ionization; Logic; Modems; Random access memory; Single event upset; Switches; Time measurement; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.3371
  • Filename
    3371
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1207850