DocumentCode
1207856
Title
Model for hysteresis and kink behavior of MOS transistors operating at 4.2 K
Author
Dierickx, B. ; Warmerdam, L. ; Simoen, E. ; Vermeiren, J. ; Claeys, C.
Author_Institution
IMEC, Leuven, Belgium
Volume
35
Issue
7
fYear
1988
fDate
7/1/1988 12:00:00 AM
Firstpage
1120
Lastpage
1125
Abstract
The hysteresis and kink characteristics of MOS transistors (MOSTs) operating at 4.2 K have been investigated. The response time of a MOST depends exponentially on the inverse of the drain voltage. A model is proposed that explains both the transient and kink behavior of the devices. It is based on the forced formation of the depletion layer caused by the avalanche-generated substrate current. The model is compared with previous models published in the literature
Keywords
cryogenics; hysteresis; insulated gate field effect transistors; semiconductor device models; transient response; 4.2 K; MOS transistors; MOSTs; avalanche-generated substrate current; depletion layer; drain voltage; forced formation; hysteresis; kink behavior; model; response time; transient characteristics; Circuits; Delay; Electronics cooling; Hysteresis; MOS devices; MOSFETs; Performance evaluation; Silicon on insulator technology; Temperature; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.3372
Filename
3372
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