Title :
Model for hysteresis and kink behavior of MOS transistors operating at 4.2 K
Author :
Dierickx, B. ; Warmerdam, L. ; Simoen, E. ; Vermeiren, J. ; Claeys, C.
Author_Institution :
IMEC, Leuven, Belgium
fDate :
7/1/1988 12:00:00 AM
Abstract :
The hysteresis and kink characteristics of MOS transistors (MOSTs) operating at 4.2 K have been investigated. The response time of a MOST depends exponentially on the inverse of the drain voltage. A model is proposed that explains both the transient and kink behavior of the devices. It is based on the forced formation of the depletion layer caused by the avalanche-generated substrate current. The model is compared with previous models published in the literature
Keywords :
cryogenics; hysteresis; insulated gate field effect transistors; semiconductor device models; transient response; 4.2 K; MOS transistors; MOSTs; avalanche-generated substrate current; depletion layer; drain voltage; forced formation; hysteresis; kink behavior; model; response time; transient characteristics; Circuits; Delay; Electronics cooling; Hysteresis; MOS devices; MOSFETs; Performance evaluation; Silicon on insulator technology; Temperature; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
