Title :
Waveform measurements in high-speed silicon bipolar circuits using a picosecond photoelectron scanning electron microscope
Author :
May, Paul ; Halbout, Jean-Marc ; Chuang, C.T. ; Li, G.P.
Author_Institution :
IBM Corp., Yorktown Heights, NY, USA
fDate :
7/1/1988 12:00:00 AM
Abstract :
A description is given of a noncontact waveform measurement technique for the characterization of high-speed LSI and VLSI circuits using a picosecond photoelectron scanning electron microscope with 5-ps temporal resolution, 0.1-μm spatial resolution, and a voltage resolution of 3 mV/√Hz. The ability of the technique to measure and monitor the internal waveforms and to resolve the different contributions of the delay in the circuit without any loading effect is demonstrated by its application to the full characterization of sub-100-ps silicon bipolar ECL (emitter-coupled logic) circuits
Keywords :
VLSI; bipolar integrated circuits; elemental semiconductors; emitter-coupled logic; integrated circuit testing; large scale integration; logic testing; scanning electron microscope examination of materials; silicon; 0.1 micron; 3 mV; 5 ps; ECL; IC testing; Si; VLSI circuits; bipolar circuits; emitter-coupled logic; high-speed LSI; noncontact waveform measurement technique; picosecond photoelectron SEM; scanning electron microscope; spatial resolution; temporal resolution; voltage resolution; Circuits; Large scale integration; Measurement techniques; Monitoring; Photoelectron microscopy; Scanning electron microscopy; Silicon; Spatial resolution; Very large scale integration; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
