Title :
A new physical model of the light amplifying optical switch (LAGS)
Author :
Zebda, Yousef ; Qasaimeh, Omar
Author_Institution :
Dept. of Electr. Eng., Jordan Univ. of Sci. & Technol., Irbid, Jordan
fDate :
12/1/1994 12:00:00 AM
Abstract :
A new physical model of determining the static I-V curve of the light amplifying optical switch (LAOS) is derived. The model is based on deriving the currents of the HPT and the feedback current of the LAOS. The feedback currents for optical and/or electrical feedback are determined by solving the continuity equation in the collector and the base of the HPT. A negative resistance region in the I-V curve is obtained and controlled by varying the feedback coefficient of the device and the Early effect coefficient. The main factors affecting the negative resistance region are the feedback coefficient, Early effect, the recombination currents in the emitter-base space-charge region, and the ratio of the collector to base doping. The switching voltage of the device is also calculated for different parameters
Keywords :
electron-hole recombination; negative resistance devices; optical switches; phototransistors; semiconductor device models; Early effect coefficient; HPT; I-V curve; LAOS; collector-to-base doping ratio; continuity equation; emitter-base space-charge region; feedback coefficient; feedback current; heterojunction phototransistor; light amplifying optical switch; negative resistance region; recombination currents; static I-V curve; switching voltage; Electric resistance; Heterojunctions; Negative feedback; Nonlinear optics; Optical devices; Optical feedback; Optical sensors; Optical switches; Stimulated emission; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on