Two-dimensional analysis of substrate-related kink phenomena in GaAs MESFET´s

Author

Horio, Kazushige ; Satoh, Katsuhiko

Author_Institution

Fac. of Syst. Eng., Shibaura Inst. of Technol., Tokyo, Japan

Volume

41

Issue

12

fYear

1994

fDate

12/1/1994 12:00:00 AM

Firstpage

2256

Lastpage

2261

Abstract

Two-dimensional simulations of GaAs MESFET´s are made in which impact ionization of carriers and impurity compensation by deep levels in semi-insulating substrates are considered. It is shown that in cases with high acceptor densities in the semi-insulating substrates, a steep increase in output conductance with the drain voltage (“kink”) arises because holes that are generated by impact ionization flow into the substrates and are captured by the deep levels to modulate the space-charge distributions. In cases with low acceptor densities in the substrates, a sudden increase in drain currents due to conductivity modulation in the substrates is observed. It is concluded that carrier trapping and current transport in the semi-insulating substrate should be taken into account when considering kink effects and/or breakdown phenomena in GaAs MESFET´s

Keywords

III-V semiconductors; Schottky gate field effect transistors; avalanche breakdown; deep levels; electron traps; gallium arsenide; impact ionisation; semiconductor device models; GaAs; MESFETs; acceptor densities; breakdown phenomena; carrier trapping; conductivity modulation; deep levels; impact ionization; impurity compensation; output conductance; space-charge distributions; substrate-related kink phenomena; two-dimensional simulations; Avalanche breakdown; Breakdown voltage; Electric breakdown; Gallium arsenide; Impact ionization; Impurities; Insulation; MESFETs; Modeling; Neodymium;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.337436

Filename

337436