Title :
Drawbacks to using NIST electromigration test-structures to test bamboo metal lines
Author :
De Munari, Ilaria ; Scorzoni, Andrea ; Tamarri, Fabrizio ; Govoni, Donato ; Corticelli, Franco ; Fantini, Fausto
Author_Institution :
Dipartimento di Ingegneria dell´´Inf., Parma Univ., Italy
fDate :
12/1/1994 12:00:00 AM
Abstract :
In this work the applicability of NIST electromigration test patterns when used to test “bamboo” metal lines is discussed. Wafer level tests on passivated and nonpassivated samples employing the Al-1%Si/TiN/Ti metallization scheme were performed. Straight metal lines 1000 μm long and 0.9 μm or 1.4 μm wide were tested at two different current densities, j=3 MA/cm2 and J=4.5 MA/cm2, keeping the stress temperature at T=230°C. The failures occurred mainly in the end segment areas and hindered the evaluation of the electromigration resistance of the test lines. In order to avoid this problem, completely different test patterns containing a number of geometrical variations should be defined
Keywords :
aluminium alloys; electromigration; integrated circuit measurement; integrated circuit metallisation; integrated circuit testing; passivation; titanium; titanium compounds; 0.9 micron; 1.4 micron; 1000 micron; 230 degC; AlSi-TiN-Ti; AlSi/TiN/Ti metallization; NIST electromigration test-structures; bamboo metal lines; current densities; end segment areas; nonpassivated samples; passivated samples; stress temperature; wafer level tests; Circuit testing; Current density; Electromigration; Metallization; NIST; Performance evaluation; Stress; Temperature; Thin film circuits; Tin;
Journal_Title :
Electron Devices, IEEE Transactions on
