Hot-carrier-injected oxide region in front and back interfaces in ultra-thin (50 nm), fully depleted, deep-submicron NMOS and PMOSFET´s/SIMOX and their hot-carrier immunity

Author

Tsuchiya, Toshiaki ; Ohno, Terukazu ; Kado, Yuichi ; Kai, Junko

Author_Institution

Adv. Technol. Corp., NTT LSI Labs., Kanagawa, Japan

Volume

41

Issue

12

fYear

1994

fDate

12/1/1994 12:00:00 AM

Firstpage

2351

Lastpage

2356

Abstract

The hot-carrier-injected oxide region in the front and back interfaces is systematically clarified for fully depleted surface-channel nMOSFET´s and surface-channel and buried-channel pMOSFET´s fabricated on an ultra-thin (50 nm)-film SIMOX wafer. Based on these results, the influence of these injected carriers on front-channel properties is investigated. NMOSFET degradation is shown to be caused by hot-carriers injected into the drain side of the front oxide and pMOSFET degradation by hot-electrons injected into the drain side of both the front oxide and the back oxide. Additionally, it is shown experimentally that these fully depleted devices with effective channel lengths between 0.1-0.2 μm have fairly high hot-carrier immunity, even for single-drain structures

Keywords

MOSFET; SIMOX; hot carriers; 0.1 to 0.2 micron; 50 nm; back interfaces; buried-channel; degradation; front interfaces; fully depleted deep-submicron devices; hot-carrier immunity; hot-carrier-injected oxide; nMOSFETs; pMOSFETs; single-drain structures; surface-channel; ultra-thin-film SIMOX wafer; Degradation; Hot carrier effects; Hot carrier injection; Hot carriers; Immune system; MOS devices; MOSFET circuits; Parasitic capacitance; Ultra large scale integration; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.337448

Filename

337448