Electrical and optical speed measurements on the silicon heterostructure switch

Author

Green, Roger J. ; Chol, Ajuoi M.

Author_Institution

Electron. Imaging & Media Commun. Unit., Bradford Univ., UK

Volume

41

Issue

12

fYear

1994

fDate

12/1/1994 12:00:00 AM

Firstpage

2376

Lastpage

2384

Abstract

This paper examines transient effects in the silicon heterostructure switch caused by electrical and optical stimuli. The previous work by others is extended to include the effects of external load and input pulse width conditions. For electrical drive pulses, the turn-on time has three components, being (1) capacitive rise time, (2) turn-on delay time, and (3) feedback regenerative time, being typically 7.5 μs, 3.3 μs, and 50 μs respectively. Optical switching is seen to be quite different in outcome compared to the electrical type. The results overall advance appreciation of the device´s capabilities, and compare well with other investigations

Keywords

elemental semiconductors; photoconducting switches; semiconductor heterojunctions; semiconductor switches; silicon; 3.3 mus; 50 mus; 7.5 mus; Si; capacitive rise time; electrical drive pulses; electrical speed; external load; feedback regenerative time; optical speed; optical switching; silicon heterostructure switch; transient effects; turn-on delay time; turn-on time; Electric resistance; Electric variables measurement; Optical feedback; Optical films; Optical pulses; Optical scattering; Optical switches; Silicon; Velocity measurement; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.337452

Filename

337452