Title :
Investigation of carrier generation in fully depleted enhancement and accumulation mode SOI MOSFET´s
Author :
Sinha, Shankar P. ; Zaleski, Andrzej ; Ioannou, Dimitris E.
Author_Institution :
Dept. of Electr. & Comput. Eng., George Mason Univ., Fairfax, VA, USA
fDate :
12/1/1994 12:00:00 AM
Abstract :
An unified dual gate Zerbst-like technique has been developed to extract the generation lifetime in enhancement and accumulation mode fully depleted SOI MOSFET´s. The technique is based on the analysis of the temporal variation of the quasi Fermi levels in the devices, following the application of a suitable voltage step on one of the gates. The analysis resulted in simple Zerbst-like expressions for the drain current transients. Numerical simulations, using PISCES, have been performed to validate the technique and its underlying analysis. The technique has been applied to both kinds of typical fully depleted SIMOX SOI MOSFET´s and the measured generation lifetimes were in the range of 0.1 μs to 1.0 μs
Keywords :
MOSFET; carrier lifetime; semiconductor device models; silicon-on-insulator; simulation; 0.1 to 1 mus; PISCES; SIMOX; SOI MOSFET; Si; accumulation mode; carrier generation; drain current transients; enhancement mode; fully depleted type; generation lifetime; numerical simulations; quasi Fermi levels; unified dual gate Zerbst-like technique; Capacitance measurement; Data mining; Helium; MOSFET circuits; Numerical simulation; Performance analysis; Semiconductor films; Silicon on insulator technology; Transient analysis; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
