Turnoff transient characteristics of complementary insulated-gate bipolar transistor

Author

Li, Zhaoji ; Du, Juan

Author_Institution

Res. Inst. of Microelectronics, Univ. of Electron. Sci. & Technol. of China, Chengdu, China

Volume

41

Issue

12

fYear

1994

fDate

12/1/1994 12:00:00 AM

Firstpage

2468

Lastpage

2471

Abstract

An analytical model used for analyzing the fast turnoff transient characteristics of the complementary insulated-gate bipolar transistor (CIGBT) is proposed, accounting for the transient charge-sharing effect and the back-injection effect. The normalized turnoff transient current of the CIGBT is obtained, which is in agreement with the enhanced SPICE3 simulated results and the experiment. The relationships of the turnoff time T₀ with the device parameters are given. The modeling methodology is also applicable to the mixed LIGBT/LDMOS

Keywords

insulated gate bipolar transistors; power system transients; power transistors; semiconductor device models; transients; analytical model; back-injection effect; complementary IGBT; insulated-gate bipolar transistor; mixed LIGBT/LDMOS; transient charge-sharing effect; turnoff transient characteristics; Analytical models; Charge carrier processes; Electron emission; Electron mobility; Equations; Insulated gate bipolar transistors; Insulation; MOSFETs; Steady-state; Transient analysis;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.337466

Filename

337466