Title :
Turnoff transient characteristics of complementary insulated-gate bipolar transistor
Author :
Li, Zhaoji ; Du, Juan
Author_Institution :
Res. Inst. of Microelectronics, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fDate :
12/1/1994 12:00:00 AM
Abstract :
An analytical model used for analyzing the fast turnoff transient characteristics of the complementary insulated-gate bipolar transistor (CIGBT) is proposed, accounting for the transient charge-sharing effect and the back-injection effect. The normalized turnoff transient current of the CIGBT is obtained, which is in agreement with the enhanced SPICE3 simulated results and the experiment. The relationships of the turnoff time T0 with the device parameters are given. The modeling methodology is also applicable to the mixed LIGBT/LDMOS
Keywords :
insulated gate bipolar transistors; power system transients; power transistors; semiconductor device models; transients; analytical model; back-injection effect; complementary IGBT; insulated-gate bipolar transistor; mixed LIGBT/LDMOS; transient charge-sharing effect; turnoff transient characteristics; Analytical models; Charge carrier processes; Electron emission; Electron mobility; Equations; Insulated gate bipolar transistors; Insulation; MOSFETs; Steady-state; Transient analysis;
Journal_Title :
Electron Devices, IEEE Transactions on
