Title :
Miller´s approximation in advanced bipolar transistors under nonlocal impact ionization conditions
Author :
Kumar, M. Jagadesh ; Roulston, David J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
fDate :
12/1/1994 12:00:00 AM
Abstract :
Using a modified ionization model based on nonlocal impact ionization conditions, Miller´s relationship is reexamined for doping concentrations (⩾1017/cm3) used in advanced bipolar transistors. For the useful range of current gains (0.1>1-1/M>0.005), the empirical parameter n in Miller´s relationship, evaluated under nonlocal impact ionization conditions is shown to be considerably different from that obtained using standard ionization rates
Keywords :
bipolar transistors; doping profiles; impact ionisation; semiconductor device models; Miller´s approximation; advanced bipolar transistors; doping concentrations; modified ionization model; nonlocal impact ionization conditions; Analytical models; Bipolar transistors; Electric breakdown; Electron devices; Impact ionization; Insulated gate bipolar transistors; Integrated circuit modeling; MOSFETs; P-n junctions; Transient analysis;
Journal_Title :
Electron Devices, IEEE Transactions on
