• DocumentCode
    1208199
  • Title

    Miller´s approximation in advanced bipolar transistors under nonlocal impact ionization conditions

  • Author

    Kumar, M. Jagadesh ; Roulston, David J.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
  • Volume
    41
  • Issue
    12
  • fYear
    1994
  • fDate
    12/1/1994 12:00:00 AM
  • Firstpage
    2471
  • Lastpage
    2473
  • Abstract
    Using a modified ionization model based on nonlocal impact ionization conditions, Miller´s relationship is reexamined for doping concentrations (⩾1017/cm3) used in advanced bipolar transistors. For the useful range of current gains (0.1>1-1/M>0.005), the empirical parameter n in Miller´s relationship, evaluated under nonlocal impact ionization conditions is shown to be considerably different from that obtained using standard ionization rates
  • Keywords
    bipolar transistors; doping profiles; impact ionisation; semiconductor device models; Miller´s approximation; advanced bipolar transistors; doping concentrations; modified ionization model; nonlocal impact ionization conditions; Analytical models; Bipolar transistors; Electric breakdown; Electron devices; Impact ionization; Insulated gate bipolar transistors; Integrated circuit modeling; MOSFETs; P-n junctions; Transient analysis;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.337467
  • Filename
    337467
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1208199