Title :
Nonuniform reverse-breakdown characteristics of n+-diodes fabricated by LOCOS and trench isolation
Author :
Ohzone, Takashi ; Iwata, Hideyuki
Author_Institution :
Dept. of Electron. & Inf., Toyama Prefectural Univ., Japan
fDate :
12/1/1994 12:00:00 AM
Abstract :
Light emission-intensity profiles, images and nonuniform photon counts from reverse biased n+-diode fabricated by LOCOS and trench isolation are measured. Both spatial fluctuations of the emission profiles and nonuniform photon counts are relatively larger in trench-isolated diodes than those in LOCOS-isolated ones, and decrease as the reverse current increases
Keywords :
electric breakdown; electroluminescence; semiconductor diodes; LOCOS isolation; light emission-intensity profiles; n+-diodes; nonuniform photon counts; nonuniform reverse-breakdown characteristics; reverse biased diode; reverse current; spatial fluctuations; trench isolation; Degradation; Diodes; Electric breakdown; Electric variables measurement; Fabrication; Failure analysis; Fluctuations; Microscopy; Optical filters; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
