• DocumentCode
    1208217
  • Title

    Nonuniform reverse-breakdown characteristics of n+-diodes fabricated by LOCOS and trench isolation

  • Author

    Ohzone, Takashi ; Iwata, Hideyuki

  • Author_Institution
    Dept. of Electron. & Inf., Toyama Prefectural Univ., Japan
  • Volume
    41
  • Issue
    12
  • fYear
    1994
  • fDate
    12/1/1994 12:00:00 AM
  • Firstpage
    2477
  • Lastpage
    2480
  • Abstract
    Light emission-intensity profiles, images and nonuniform photon counts from reverse biased n+-diode fabricated by LOCOS and trench isolation are measured. Both spatial fluctuations of the emission profiles and nonuniform photon counts are relatively larger in trench-isolated diodes than those in LOCOS-isolated ones, and decrease as the reverse current increases
  • Keywords
    electric breakdown; electroluminescence; semiconductor diodes; LOCOS isolation; light emission-intensity profiles; n+-diodes; nonuniform photon counts; nonuniform reverse-breakdown characteristics; reverse biased diode; reverse current; spatial fluctuations; trench isolation; Degradation; Diodes; Electric breakdown; Electric variables measurement; Fabrication; Failure analysis; Fluctuations; Microscopy; Optical filters; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.337469
  • Filename
    337469
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1208217