Silicon-on-insulator optical rib waveguide loss and mode characteristics

Author

Rickman, A.G. ; Reed, G.T. ; Namavar, Fereydoon

Author_Institution

Dept. of Electron. & Electr. Eng., Surrey Univ., Guildford, UK

Volume

12

Issue

10

fYear

1994

fDate

10/1/1994 12:00:00 AM

Firstpage

1771

Lastpage

1776

Abstract

Optical rib waveguides with rib heights of 3.17 and 7.67 microns with various widths have been formed in separation by implantation of oxygen (SIMOX) based silicon-on-insulator (SOI) structures. The effect of waveguide rib etch depth, width, and interface roughness on loss and mode characteristics have been studied at wavelengths of 1.15 and 1.523 microns. The experimental results support the hypothesis that certain rib dimensions can lead to single mode SOI waveguides even though planar SOI waveguides of similar multimicron dimension are not single mode. Mode loss was found to be strongly dependent on interface roughness and mode confinement

Keywords

SIMOX; etching; integrated optics; interface structure; optical losses; optical waveguides; 1.15 mum; 1.523 mum; 3.17 mum; 7.67 mum; SIMOX; SOI structures; implantation of oxygen; interface roughness; mode characteristics; mode confinement; mode loss; multimicron dimension; planar SOI waveguides; rib dimensions; rib heights; silicon-on-insulator optical rib waveguide loss; silicon-on-insulator structures; single mode SOI waveguides; waveguide rib etch depth; waveguide rib etch width; Optical losses; Optical planar waveguides; Optical refraction; Optical sensors; Optical surface waves; Optical variables control; Optical waveguides; Planar waveguides; Silicon on insulator technology; Surface waves;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.337489

Filename

337489