Spin injection in spin FETs using a step-doping profile

Author

Shen, Min ; Saikin, Semion ; Cheng, Ming-Cheng

Author_Institution

Dept. of Electr. & Comput. Eng., Clarkson Univ., Potsdam, NY, USA

Volume

4

Issue

1

fYear

2005

Firstpage

40

Lastpage

44

Abstract

We investigate the effect of a step-doping profile on the spin injection from a ferromagnetic metal contact into a semiconductor quantum well in spin field-effect transistors using a Monte Carlo model. The considered scheme uses a heavily doped layer at the metal-semiconductor interface to vary the Schottky barrier shape and enhance the tunneling current. It is found that spin flux (spin current density) is enhanced proportionally to the total current, and the variation of current spin polarization does not exceed 20%.

Keywords

III-V semiconductors; Monte Carlo methods; Schottky barriers; Schottky gate field effect transistors; aluminium compounds; current density; doping profiles; ferromagnetic materials; gallium arsenide; heavily doped semiconductors; iron; magnetoelectronics; semiconductor quantum wells; semiconductor-metal boundaries; spin polarised transport; tunnelling; Fe-Al_0.4Ga_0.6As-GaAs-Al_0.4Ga_0.6As; Monte Carlo model; Schottky barrier; current spin polarization; ferromagnetic metal contact; heavily doped layer; metal-semiconductor interface; semiconductor quantum well; spin FET; spin current density; spin field effect transistors; spin flux; spin injection; step doping profile; tunneling current; Doping profiles; FETs; Gallium arsenide; Magnetoelectronics; Monte Carlo methods; Schottky barriers; Semiconductor device doping; Shape; Spin polarized transport; Tunneling;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2004.840150

Filename

1381391