Title :
Probing magnetic anisotropy and spin polarization in spintronic materials
Author :
Poddar, Pankaj ; Woods, Gerald T. ; Srinath, Sanyadanam ; Srikanth, Hariharan
Author_Institution :
Dept. of Phys., Univ. of South Florida, Tampa, FL, USA
Abstract :
Magnetic anisotropy and spin polarization are fundamental parameters in ferromagnetic materials that have use in spintronic device applications. As the need for screening properties of new magnetic materials rises, it is important to have measurement probes for quantities such as anisotropy and spin polarization. We have developed two unconventional yet powerful techniques to study these parameters. A resonant RF transverse susceptibility method is used to map the characteristic anisotropy and switching fields over a wide range in temperature and magnetic fields. For studies of spin polarization, the phenomenon of Andreev reflection across ferromagnet-superconductor junctions is used to extract values of the transport spin polarization. The effectiveness of these approaches is demonstrated in candidate spintronic materials such as half-metallic CrO2 thin films and arrays of monodisperse, single-domain Fe nanoparticles.
Keywords :
chromium compounds; ferromagnetic materials; iron; magnetic anisotropy; magnetic shielding; magnetic susceptibility; magnetic switching; magnetoelectronics; nanoparticles; point contacts; semimetallic thin films; spin polarised transport; superconducting materials; tin; CrO2-Sn; Fe; ferromagnet-superconductor junctions; ferromagnetic materials; half metallic CrO2 thin films; monodisperse array; point contact Andreev reflection; probing magnetic anisotropy; resonant RF transverse susceptibility method; screening properties; single domain Fe nanoparticles; spin polarization; spintronic device; spintronic materials; switching fields; Anisotropic magnetoresistance; Magnetic anisotropy; Magnetic field measurement; Magnetic materials; Magnetic properties; Magnetic resonance; Magnetoelectronics; Polarization; Probes; Radio frequency;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2004.840155