• DocumentCode
    1208435
  • Title

    Study of temperature dependence of electron-phonon relaxation and dephasing in semiconductor double-dot nanostructures

  • Author

    Fedichkin, Leonid ; Fedorov, Arkady

  • Author_Institution
    Dept. of Electr., Clarkson Univ., Potsdam, NY, USA
  • Volume
    4
  • Issue
    1
  • fYear
    2005
  • Firstpage
    65
  • Lastpage
    70
  • Abstract
    This paper examines mechanisms of relaxation and dephasing of electrons in double-dot nanostructures due to interaction with acoustic phonon modes. The effect of temperature of phonon bath on decay on electron quantum evolution is obtained. Our results set the temperature ranges outside of which the quantum dynamics of electrons will be significantly suppressed.
  • Keywords
    III-V semiconductors; electron-phonon interactions; gallium arsenide; nanostructured materials; quantum theory; semiconductor quantum dots; GaAs; Si; acoustic phonon modes; electron quantum evolution; electron-phonon dephasing; electron-phonon relaxation; phonon bath; quantum dynamics; semiconductor double dot nanostructures; temperature dependence; Charge carrier processes; Electrons; Encoding; Phonons; Quantum computing; Quantum dots; Quantum mechanics; Semiconductor nanostructures; Temperature dependence; Temperature distribution;
  • fLanguage
    English
  • Journal_Title
    Nanotechnology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1536-125X
  • Type

    jour

  • DOI
    10.1109/TNANO.2004.840156
  • Filename
    1381396
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1208435