DocumentCode :
1208435
Title :
Study of temperature dependence of electron-phonon relaxation and dephasing in semiconductor double-dot nanostructures
Author :
Fedichkin, Leonid ; Fedorov, Arkady
Author_Institution :
Dept. of Electr., Clarkson Univ., Potsdam, NY, USA
Volume :
4
Issue :
1
fYear :
2005
Firstpage :
65
Lastpage :
70
Abstract :
This paper examines mechanisms of relaxation and dephasing of electrons in double-dot nanostructures due to interaction with acoustic phonon modes. The effect of temperature of phonon bath on decay on electron quantum evolution is obtained. Our results set the temperature ranges outside of which the quantum dynamics of electrons will be significantly suppressed.
Keywords :
III-V semiconductors; electron-phonon interactions; gallium arsenide; nanostructured materials; quantum theory; semiconductor quantum dots; GaAs; Si; acoustic phonon modes; electron quantum evolution; electron-phonon dephasing; electron-phonon relaxation; phonon bath; quantum dynamics; semiconductor double dot nanostructures; temperature dependence; Charge carrier processes; Electrons; Encoding; Phonons; Quantum computing; Quantum dots; Quantum mechanics; Semiconductor nanostructures; Temperature dependence; Temperature distribution;
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2004.840156
Filename :
1381396
Link To Document :
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