DocumentCode :
1208443
Title :
Shot noise in resonant tunneling through an interacting quantum dot with intradot spin-flip scattering
Author :
Djuric, Ivana ; Dong, Bing ; Cui, Hong-Liang
Author_Institution :
Stevens Inst. of Technol., Hoboken, NJ, USA
Volume :
4
Issue :
1
fYear :
2005
Firstpage :
71
Lastpage :
76
Abstract :
We present theoretical investigation of the zero-frequency shot-noise spectra in electron tunneling through an interacting quantum dot connected to two ferromagnetic leads with the possibility of spin-flip scattering between the two spin states by means of the recently developed bias-voltage and temperature-dependent quantum rate equations. For this purpose, a generalization of the traditional generation-recombination approach is made for properly taking into account the coherent superposition of electronic states, i.e., the nondiagonal density matrix elements. Our numerical calculations find that the Fano factor increases with increasing the polarization of the two leads, but decreases with increasing the intradot spin-flip scattering.
Keywords :
Coulomb blockade; electron spin polarisation; ferromagnetic materials; numerical analysis; quantum dots; resonant tunnelling; shot noise; spin dynamics; Fano factor; bias voltage; coherent superposition; electron tunneling; electronic states; ferromagnetic leads; interacting quantum dot; intradot spin-flip scattering; nondiagonal density matrix elements; numerical calculations; resonant tunneling; spin states; temperature dependent quantum rate equations; traditional generation-recombination approach; zero frequency shot noise spectra; Charge measurement; Current measurement; Electric variables measurement; Equations; Particle scattering; Quantum dots; Quantum mechanics; Resonant tunneling devices; Single electron devices; US Department of Transportation;
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2004.840157
Filename :
1381397
Link To Document :
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