Title :
Compensation effects on the electron velocity in submicrometer GaAs MESFETs
Author :
Grotjohn, Timothy A.
Author_Institution :
Dept. of Electr. Eng., Michigan State Univ., East Lansing, MI, USA
fDate :
7/1/1988 12:00:00 AM
Abstract :
The transient overshoot of the electron velocity for compensation GaAs is calculated using the Monte Carlo method. The transient electron velocity characteristics are compared for various compensation ratios. The influence of the compensation ratio on the GaAs MESFET structure was simulated using a two-dimensional Monte Carlo simulator. The drain current, transconductance, and channel electron velocity of submicrometer MESFETs are presented for various compensation ratios
Keywords :
III-V semiconductors; Monte Carlo methods; Schottky gate field effect transistors; compensation; gallium arsenide; semiconductor device models; transient response; GaAs; III-V semiconductors; Monte Carlo method; channel electron velocity; compensation ratio; drain current; electron velocity characteristics; submicrometer MESFETs; transconductance; transient overshoot; two-dimensional Monte Carlo simulator; Conducting materials; Electron mobility; Gallium arsenide; Impurities; MESFETs; Monte Carlo methods; Particle scattering; Steady-state; Transconductance; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
