Preparation and properties of PbTiO/sub 3/ and Pb(Sc/sub 0.5/Ta/sub 0.5/)O/sub 3/ thin films by sol-gel processing

Author

Patel, A. ; Shorrocks, N.M. ; Whatmore, R.W.

Author_Institution

GEC-Marconi Mater. Technol. Ltd., Towcester, UK

Volume

38

Issue

6

fYear

1991

Firstpage

672

Lastpage

676

Abstract

Crack-free and dense PbTiO/sub 3/ films 1-2 mu m thick were prepared by spinning a sol-gel derived solution onto an appropriate substrate, and firing and annealing the film at temperatures of 750-800 degrees C. The electrical properties of the films were studied as a function of temperature, frequency, and DC bias. Also, crack-free films of Pb(Sc/sub 0.5/Ta/sub 0.5/)O/sub 3/ with an average grain size of 0.4 mu m were prepared using a novel two-stage process. Films 4 mu m thick had moderately high relative permittivities, low dissipation factors, and high resistivity.<>

Keywords

ferroelectric materials; ferroelectric thin films; grain size; lead compounds; sol-gel processing; 1 to 2 micron; 4 micron; 750 to 800 degC; DC bias; Pb(Sc/sub 0.5/Ta/sub 0.5/)O/sub 3/ thin films; PbScO/sub 3/TaO/sub 3/; annealing; crack free dense PbTiO/sub 3/ films; electrical properties; ferroelectric thin film; firing; frequency dependence; grain size; high relative permittivities; high resistivity; low dissipation factors; relaxor ferroelectric; sol-gel processing; spinning; substrate; temperature dependence; two-stage process; Chemical vapor deposition; Coatings; Dielectric thin films; Ferroelectric materials; Lead; Piezoelectric films; Platinum; Sputtering; Thin film circuits; Transistors;

fLanguage

English

Journal_Title

Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on

Publisher

ieee

ISSN

0885-3010

Type

jour

DOI

10.1109/58.108868

Filename

108868