DocumentCode
1208539
Title
Static characteristics of 2.3-nm gate-oxide MOSFETs
Author
Nagai, Kiyoko ; Hayashi, Yutaka
Author_Institution
Electrotech. Lab., Ibaraki, Japan
Volume
35
Issue
7
fYear
1988
fDate
7/1/1988 12:00:00 AM
Firstpage
1145
Lastpage
1147
Abstract
The static characteristics of experimentally fabricated 2.3-nm gate-oxide MOSFETs were reasonably fitted from the subthreshold to postthreshold region by a Pao-Sah double-integral MOSFET model modified with field-dependent mobility. Gate leakage current was negligibly small compared to drain current at the threshold voltage
Keywords
insulated gate field effect transistors; semiconductor device models; 2.3 nm; MOSFET model; Pao-Sah double integral model; drain current; field-dependent mobility; gate leakage current; gate-oxide; postthreshold region; static characteristics; subthreshold region; threshold voltage; Electron devices; Gallium arsenide; Leakage current; MESFETs; MOSFETs; Monte Carlo methods; Packaging; Semiconductor devices; Threshold voltage; Transconductance;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.3377
Filename
3377
Link To Document