Title :
An improved MODFET microwave analysis
Author_Institution :
Bell Commun. Res. Inc., Red Bank, NJ, USA
fDate :
7/1/1988 12:00:00 AM
Abstract :
A recently proposed MODFET analysis is improved by presenting more accurate expressions for the MODFET admittance parameters. It is shown that the resulting parameters can improve the frequency range of validity by a factor of two over those recently presented, and that the latter represent a low-frequency approximation to the parameters given here. An equivalent circuit is presented for the MODFET that is valid up to twice the device cutoff frequency and contains no element with negative values
Keywords :
electric admittance; equivalent circuits; high electron mobility transistors; semiconductor device models; solid-state microwave devices; HEMT; MODFET; admittance parameters; equivalent circuit; frequency range; microwave analysis; microwave device; modelling; Admittance; Equivalent circuits; Frequency; HEMTs; Integrated circuit technology; MODFET circuits; MODFET integrated circuits; Microwave technology; Military computing; Space technology;
Journal_Title :
Electron Devices, IEEE Transactions on
