DocumentCode :
1208551
Title :
Nanostructured Silicon Thin Films Deposited Under Dusty Plasma Conditions
Author :
Cavarroc, Marjorie ; Mikikian, Maxime ; Tessier, Yves ; Boufendi, Laïfa
Author_Institution :
Groupe de Recherches sur l´´Energetique des Milieux Ionises (GREMI), Univ. d´´Orleans, Orleans
Volume :
36
Issue :
4
fYear :
2008
Firstpage :
1016
Lastpage :
1017
Abstract :
Silane-based dusty plasmas are widely used in plasma-enhanced chemical vapor deposition processes to synthesize silicon nanoparticles and/or nanostructured thin films. Under certain conditions, it is possible to access to the inner structure of the thin film by scanning electron microscopy, using the ldquoholerdquo due to dust particles that moved when the sample is brought back to atmospheric pressure.
Keywords :
dusty plasmas; elemental semiconductors; nanoparticles; plasma CVD; scanning electron microscopy; semiconductor growth; semiconductor thin films; silicon; Si; atmospheric pressure; nanoparticles; nanostructured silicon thin films; plasma-enhanced chemical vapor deposition; scanning electron microscopy; silane-based dusty plasmas; Dust particle; PECVD; dusty plasma; nanostructured thin film; radio frequency (RF) discharge; silicon;
fLanguage :
English
Journal_Title :
Plasma Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0093-3813
Type :
jour
DOI :
10.1109/TPS.2008.920889
Filename :
4509474
Link To Document :
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