• DocumentCode
    1208560
  • Title

    Suppression of hot-carrier effects in submicrometer surface-channel PMOSFETs

  • Author

    Brassington, Michael P. ; Poulter, Mark W. ; El-diwany, Monir

  • Author_Institution
    Nat. Semicond., Palo Alto, CA, USA
  • Volume
    35
  • Issue
    7
  • fYear
    1988
  • fDate
    7/1/1988 12:00:00 AM
  • Firstpage
    1149
  • Lastpage
    1151
  • Abstract
    Hot-carrier-induced degradation in surface-channel (p-type polysilicon gate) PMOSFETs is investigated. Hot-electron-induced punchthrough is found to limit the lifetime of these devices. Although these surface-channel devices are observed to be more reliable than conventional buried-channel transistors, a lightly doped drain design is found to be necessary to provide adequate suppression of hot-carrier generation in 0.8-μm-gate-length (Leff=0.5 μm) transistors operated at 5 V
  • Keywords
    hot carriers; insulated gate field effect transistors; reliability; 0.8 micron; 5 V; LDD device; PMOSFETs; device lifetime; hot carrier effects suppression; hot carrier induced degradation; hot-carrier generation; lightly doped drain design; p-type MOSFET; polycrystalline Si gate; polysilicon gate; punchthrough; reliability; submicron gate length; surface-channel devices; Capacitors; Electrons; Equivalent circuits; Gallium arsenide; HEMTs; Hot carrier effects; Inductors; MODFET circuits; MOSFETs; Resistors;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.3379
  • Filename
    3379
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1208560