Title :
Suppression of hot-carrier effects in submicrometer surface-channel PMOSFETs
Author :
Brassington, Michael P. ; Poulter, Mark W. ; El-diwany, Monir
Author_Institution :
Nat. Semicond., Palo Alto, CA, USA
fDate :
7/1/1988 12:00:00 AM
Abstract :
Hot-carrier-induced degradation in surface-channel (p-type polysilicon gate) PMOSFETs is investigated. Hot-electron-induced punchthrough is found to limit the lifetime of these devices. Although these surface-channel devices are observed to be more reliable than conventional buried-channel transistors, a lightly doped drain design is found to be necessary to provide adequate suppression of hot-carrier generation in 0.8-μm-gate-length (Leff=0.5 μm) transistors operated at 5 V
Keywords :
hot carriers; insulated gate field effect transistors; reliability; 0.8 micron; 5 V; LDD device; PMOSFETs; device lifetime; hot carrier effects suppression; hot carrier induced degradation; hot-carrier generation; lightly doped drain design; p-type MOSFET; polycrystalline Si gate; polysilicon gate; punchthrough; reliability; submicron gate length; surface-channel devices; Capacitors; Electrons; Equivalent circuits; Gallium arsenide; HEMTs; Hot carrier effects; Inductors; MODFET circuits; MOSFETs; Resistors;
Journal_Title :
Electron Devices, IEEE Transactions on
