DocumentCode
1208672
Title
Extremely low threshold (0.56 mA) operation in 1.3 μm InGaAsP/InP compressive-strained-MQW lasers
Author
Uomi, K. ; Tsuchiya, Takao ; Komori, M. ; Oka, Akira ; Shinoda, Kazuma ; Oishi, A.
Author_Institution
Central Res. Lab., Hitachi Ltd., Tokyo
Volume
30
Issue
24
fYear
1994
fDate
11/24/1994 12:00:00 AM
Firstpage
2037
Lastpage
2038
Abstract
A record low threshold current of 0.56 mA, as a long-wavelength laser, has been obtained in a 1.3 μm InGaAsP/InP strained-MQW laser, at room temperature (25°C), by optimising an active layer and by employing a short cavity with high-reflection coatings
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; optical films; quantum well lasers; 0.56 mA; 1.3 μm InGaAsP/InP compressive-strained-MQW lasers; 1.3 mum; 25 C; InGaAsP-InP; active layer; extremely low threshold; high-reflection coatings; long-wavelength laser; low threshold current; optimising; room temperature; short cavity;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19941373
Filename
337976
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