• DocumentCode
    1208915
  • Title

    DC gain enhancement in GaAs MESFET transconductors

  • Author

    Moughabghab, R. ; Hembert, S.

  • Author_Institution
    MS2, Roubaix
  • Volume
    30
  • Issue
    24
  • fYear
    1994
  • fDate
    11/24/1994 12:00:00 AM
  • Firstpage
    2001
  • Lastpage
    2003
  • Abstract
    A novel approach is described for increasing the DC gain in GaAs transconductors up to the 100 dB level. Simple structures are used to obtain a good cutoff frequency up to ft/10 and under 1.5 V of power supply voltage
  • Keywords
    III-V semiconductors; MESFET integrated circuits; active networks; continuous time filters; field effect analogue integrated circuits; gallium arsenide; 1.5 V; 100 dB; DC gain enhancement; GaAs; MESFET transconductors; continuous-time filters; cutoff frequency;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19941419
  • Filename
    338001
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1208915