DocumentCode :
1208915
Title :
DC gain enhancement in GaAs MESFET transconductors
Author :
Moughabghab, R. ; Hembert, S.
Author_Institution :
MS2, Roubaix
Volume :
30
Issue :
24
fYear :
1994
fDate :
11/24/1994 12:00:00 AM
Firstpage :
2001
Lastpage :
2003
Abstract :
A novel approach is described for increasing the DC gain in GaAs transconductors up to the 100 dB level. Simple structures are used to obtain a good cutoff frequency up to ft/10 and under 1.5 V of power supply voltage
Keywords :
III-V semiconductors; MESFET integrated circuits; active networks; continuous time filters; field effect analogue integrated circuits; gallium arsenide; 1.5 V; 100 dB; DC gain enhancement; GaAs; MESFET transconductors; continuous-time filters; cutoff frequency;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19941419
Filename :
338001
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1208915
بازگشت