DocumentCode
1208941
Title
Progress in ferroelectric memory technology
Author
Geideman, William A.
Author_Institution
McDonnell Douglas Electron. Syst. Co., Santa Ana, CA, USA
Volume
38
Issue
6
fYear
1991
Firstpage
704
Lastpage
711
Abstract
The application of ferroelectric films to semiconductor memories is discussed. Design and testing considerations are examined. A nonvolatile memory using the polarization hysteresis of ferroelectrics is described. Test results for PZT films on GaAs substrate are presented. The data show that nonvolatile memories are feasible and that commercial applications are within reach in the near future.<>
Keywords
dielectric hysteresis; ferroelectric storage; ferroelectric thin films; lead compounds; GaAs substrate; PZT films; PbZrO3TiO3; ferroelectric films; ferroelectric memory technology; ferroelectric polarization hysteresis; nonvolatile memory; semiconductor memories; testing considerations; Ferroelectric films; Ferroelectric materials; Gallium arsenide; Hysteresis; Nonvolatile memory; Polarization; Semiconductor films; Semiconductor memory; Substrates; Testing;
fLanguage
English
Journal_Title
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
Publisher
ieee
ISSN
0885-3010
Type
jour
DOI
10.1109/58.108872
Filename
108872
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