Title :
Progress in ferroelectric memory technology
Author :
Geideman, William A.
Author_Institution :
McDonnell Douglas Electron. Syst. Co., Santa Ana, CA, USA
Abstract :
The application of ferroelectric films to semiconductor memories is discussed. Design and testing considerations are examined. A nonvolatile memory using the polarization hysteresis of ferroelectrics is described. Test results for PZT films on GaAs substrate are presented. The data show that nonvolatile memories are feasible and that commercial applications are within reach in the near future.<>
Keywords :
dielectric hysteresis; ferroelectric storage; ferroelectric thin films; lead compounds; GaAs substrate; PZT films; PbZrO3TiO3; ferroelectric films; ferroelectric memory technology; ferroelectric polarization hysteresis; nonvolatile memory; semiconductor memories; testing considerations; Ferroelectric films; Ferroelectric materials; Gallium arsenide; Hysteresis; Nonvolatile memory; Polarization; Semiconductor films; Semiconductor memory; Substrates; Testing;
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
