Title :
23 GHz bandwidth monolithic photoreceiver compatible with InP/InGaAs double-heterojunction bipolar transistor fabrication process
Author :
Sano, Eiichi ; Yoneyama, Mitsuru ; Yamahata, S. ; Matsuoka, Yasutaka
Author_Institution :
NTT LSI Labs., Atsugi
fDate :
11/24/1994 12:00:00 AM
Abstract :
A 23 GHz bandwidth is achieved with a pin/DHBT photoreceiver in which the pin-PD is formed on the layer structure that corresponds to the base-to-collector region of the DHBTs. This is the widest bandwidth yet reported for monolithic photoreceivers
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; optical receivers; p-i-n photodiodes; 23 GHz; DHBT fabrication process compatible; InP-InGaAs; OEIC; PIN-PD; base-to-collector region; double-heterojunction bipolar transistor; layer structure; monolithic photoreceiver; p-i-n/DHBT photoreceiver; wide bandwidth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941405
