Title :
Effect of well/barrier ratio on the performance of strained InGaAs/GaAs quantum well modulators
Author :
Ghisoni, M. ; Parry, Guillaume ; Hart, L. ; Roberts, Clive ; Marinopoulou, A. ; Stavrinou, P.N.
Author_Institution :
Dept. of Eng. Sci., Oxford Univ.
fDate :
11/24/1994 12:00:00 AM
Abstract :
The authors report the electroabsorption response of strained multiquantum well In0.2Ga0.8As/GaAs structures as a function of increasing barrier thickness. We find that a tradeoff exists between improved structural quality and reduced performance due to the increase in nonabsorbing material. However changing the barrier from 100 to 200 Å causes a 25% increase in the maximum absorption change and a significant lowering of the insertion loss
Keywords :
III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; optical losses; semiconductor quantum wells; 100 to 200 A; In0.2Ga0.8As-GaAs; electroabsorption response; insertion loss; strained quantum well modulators; well/barrier ratio;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941379
