Title :
Monolithic integration of optoelectronic smart pixels
Author :
Leipold, D. ; Thelen, Klaus ; Schweizer, H.P. ; Seitz, Philipp ; Patterson, Brian D.
fDate :
11/24/1994 12:00:00 AM
Abstract :
An AlGaAs/GaAs layer structure, grown in a single step, and a fabrication process has been developed for the monolithic integration of cascadable optoelectronic smart pixels. Metal semiconductor field-effect transistors (MESFETs), light-emitting diodes (LEDs) and photodiodes (PDs) are used for the integration. As an example a threshold circuit consisting of a dual-photodiode input and a current balanced output containing an LED is presented. The circuit shows a switching energy of 2 pJ and a minimum switching power of 3 nW. The maximum light output of the LED is 30 mW with a contrast ratio >1000. The overall power dissipation is 15 mW
Keywords :
Schottky gate field effect transistors; gallium arsenide; integrated circuit technology; integrated optoelectronics; light emitting diodes; photodiodes; smart pixels; 15 mW; 2 pJ; 3 nW; 30 mW; AlGaAs-GaAs; LEDs; MESFETs; cascadable smart pixels; current balanced output; dual-photodiode input; fabrication process; light-emitting diodes; monolithic integration; optoelectronic smart pixels; photodiodes; threshold circuit;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941380
