• DocumentCode
    1209112
  • Title

    X-ray studies of high quality GaN grown on 0001 sapphire

  • Author

    Plano, W.E. ; Welch, D.F. ; Speirs, J.

  • Author_Institution
    SDL Inc., San Jose, CA
  • Volume
    30
  • Issue
    24
  • fYear
    1994
  • fDate
    11/24/1994 12:00:00 AM
  • Firstpage
    2079
  • Lastpage
    2081
  • Abstract
    X-ray data are presented on high crystalline quality GaN grown on basal plane (0001) sapphire by MOCVD. An X-ray rocking curve displaying Pendellosung fringes and having an FWHM of 27 s-1 is reported for a 0.7 μm thick film. Reciprocal space mapping of the (0002) GaN reflection is presented
  • Keywords
    CVD coatings; III-V semiconductors; X-ray crystallography; gallium compounds; light emitting diodes; semiconductor growth; 0.7 mum; Al2O3; FWHM; GaN-Al2O3; MOCVD; Pendellosung fringes; X-ray data; X-ray rocking curve; basal plane (0001) sapphire; blue LEDs; crystalline quality; reciprocal space mapping;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19941392
  • Filename
    338023
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1209112