Title :
X-ray studies of high quality GaN grown on 0001 sapphire
Author :
Plano, W.E. ; Welch, D.F. ; Speirs, J.
Author_Institution :
SDL Inc., San Jose, CA
fDate :
11/24/1994 12:00:00 AM
Abstract :
X-ray data are presented on high crystalline quality GaN grown on basal plane (0001) sapphire by MOCVD. An X-ray rocking curve displaying Pendellosung fringes and having an FWHM of 27 s-1 is reported for a 0.7 μm thick film. Reciprocal space mapping of the (0002) GaN reflection is presented
Keywords :
CVD coatings; III-V semiconductors; X-ray crystallography; gallium compounds; light emitting diodes; semiconductor growth; 0.7 mum; Al2O3; FWHM; GaN-Al2O3; MOCVD; Pendellosung fringes; X-ray data; X-ray rocking curve; basal plane (0001) sapphire; blue LEDs; crystalline quality; reciprocal space mapping;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19941392
