Mechanism of degradation of LDD MOSFETs due to hot-electron stress

Author

Bhattacharyya, Anjan ; Shabde, Sunil N.

Author_Institution

Philips Res. Lab., Sunnyvale, CA, USA

Volume

35

Issue

7

fYear

1988

fDate

7/1/1988 12:00:00 AM

Firstpage

1156

Lastpage

1158

Abstract

The dominant degradation mechanism in n-channel lightly doped drain (LDD) MOSFETs following hot-electron injection is identified. While there is no shift in the threshold voltage or any change in the subthreshold slope (implying no significant interface state generation), the peak value of the transconductance is found to degrade with stress time. This degradation is attributed to the increase in the source-drain series resistance, which is measured as a function of stress time. In addition, it is found that for any stress time, the measured series resistance is a strong function of the gate voltage, implying a modulation of the depletion width in the lightly doped region with change in the gate voltage

Keywords

hot carriers; insulated gate field effect transistors; LDD device; MOSFETs; degradation mechanism; gate voltage; hot-electron injection; hot-electron stress; lightly doped drain; n-channel; peak value; source-drain series resistance; stress time; transconductance; Degradation; Electrical resistance measurement; Electrons; Fabrication; Interface states; MOSFETs; Stress measurement; Threshold voltage; Time measurement; Transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.3382

Filename

3382